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IXTM21N50

IXYS Corporation
Part Number IXTM21N50
Manufacturer IXYS Corporation
Description MOSFET
Published Apr 5, 2005
Detailed Description MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.25 ...
Datasheet PDF File IXTM21N50 PDF File

IXTM21N50
IXTM21N50

Overview
MegaMOSTMFET IXTH / IXTM 21N50 IXTH / IXTM 24N50 N-Channel Enhancement Mode VDSS 500 V 500 V ID25 RDS(on) 21 A 0.
25 Ω 24 A 0.
23 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 21N50 24N50 21N50 24N50 Maximum Ratings 500 500 ±20 ±30 21 24 84 96 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A W °C °C °C TO-247 AD (IXTH) D (TAB) TO-204 AE (IXTM) D G = Gate, S = Source, G D = Drain, TAB = Drain Mounting torque 1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g 300 °C Features l l l l Maximum lead temperature for soldering 1.
6...


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