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IMH3A

Rohm
Part Number IMH3A
Manufacturer Rohm
Description Dual Digital Transistor
Published Apr 5, 2005
Detailed Description Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 Transistors EMH3 / UMH3N / IMH...
Datasheet PDF File IMH3A PDF File

IMH3A
IMH3A


Overview
Data downloaded from http://www.
angliac.
com - the website of Anglia - tel: 01945 474747 Transistors EMH3 / UMH3N / IMH3A General purpose (dual digital transistors) EMH3 / UMH3N / IMH3A zFeatures 1) Two DTAK13Ts chips in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
zExternal dimensions (Units : mm) EMH3 0.
22 (4) (5) (6) (3) (2) 1.
2 1.
6 (1) 0.
13 Each lead has same dimensions zStructure Epitaxial planar type NPN silicon transistor Abbreviated symbol : H3 ROHM : EMT6 UMH3N (4) 0.
65 1.
3 0.
65 0.
7 0.
8 1.
1 (3) 0.
5 0.
5 0.
5 1.
0 1.
6 0.
95 0.
95 1.
9 2.
9 0.
2 (6) 1.
25 2.
1 zEquivalent circuit EMH3 / UMH3N (3) (2) R1 (1) 0.
15 (1) The following characteristics apply to both DTr1 and DTr2.
0.
1Min.
IMH3A (4) (5) R1 (6) 0to0.
1 Each lead has same dimensions DTr1 DTr2 R1 (5) DTr2 R1 (2) DTr1 ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : H3 IMH3A (1) (6) (4) (6) (3) (4) (5) 1.
6 2.
8 zPackaging specifications Package Code Type EMH3 UMH3N IMH3A − − − Basic ordering unit (pieces) T2R 8000 Taping TN 3000 − T110 3000 − − 0.
15 0.
3to0.
6 0to0.
1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : H3 For the very latest product data and news visit angliac.
com (3) (2) R1=4.
7kΩ R1=4.
7kΩ 0.
3 (1) 0.
9 2.
0 (5) (2) Data downloaded from http://www.
angliac.
com - the website of Anglia - tel: 01945 474747 Transistors zAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation EMH3,UMH3N IMH3A Tj Tstg Symbol VCBO VCEO VEBO IC Pc Limits 50 50 5 100 150 (TOTAL) 300 (TOTAL) 150 −55~+150 °C °C Unit V V V mA mW EMH3 / UMH3N / IMH3A ∗1 ∗2 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C) Paramet...


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