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JAN2N3635

Microsemi Corporation
Part Number JAN2N3635
Manufacturer Microsemi Corporation
Description PNP SILICON AMPLIFIER TRANSISTOR
Published Apr 7, 2005
Detailed Description TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N...
Datasheet PDF File JAN2N3635 PDF File

JAN2N3635
JAN2N3635

Overview
TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC 2N3634* 2N3635* 140 140 2N3636* 2N3637* 175 175 Unit TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637 Vdc Vdc 5.
0 Vdc 1.
0 Adc @ TA = +250C(1) 1.
0 W PT @ TC = +250C(2) 5.
0 W 0 Operating & Storage Junction Temperature Range -65 to +200 C TJ, Tstg *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly 5.
71 mW/0C for TA > +250C 2) Derate linearly 28.
6 mW/0C for TC > +250C TO-5* 2N3634, 2N3635 2N3636, 2N3637 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min.
Max.
Unit OFF CHARACTERISTICS Collector-Emitt...


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