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JDH2S01T

Toshiba Semiconductor
Part Number JDH2S01T
Manufacturer Toshiba Semiconductor
Description UHF Band Mixer
Published Apr 7, 2005
Detailed Description JDH2S01T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01T UHF Band Mixer · Suitable for reducing set’s si...
Datasheet PDF File JDH2S01T PDF File

JDH2S01T
JDH2S01T

Overview
JDH2S01T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01T UHF Band Mixer · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages.
Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range Symbol VRM IF Tj Tstg Rating 5 30 125 -55~125 Unit V mA °C °C JEDEC JEITA TOSHIBA ― ― 1-1H1A Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR CT IF = 2 mA VF = 0.
5 V VR = 0.
5 V VR = 0.
2 V, f = 1 MHz Test Condition Weight: 0.
0013 g (typ.
) Min ¾ 30 ¾ ¾ Typ.
0.
25 ¾ ¾...


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