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K4R271669A-N(M)CK7

Samsung semiconductor
Part Number K4R271669A-N(M)CK7
Manufacturer Samsung semiconductor
Description 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Published Apr 7, 2005
Detailed Description K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision...
Datasheet PDF File K4R271669A-N(M)CK7 PDF File

K4R271669A-N(M)CK7
K4R271669A-N(M)CK7

Overview
K4R271669A/K4R441869A Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.
02 January 2000 Page -1 Rev.
1.
02 Jan.
2000 K4R271669A/K4R441869A Revision History Version 1.
0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.
0 ver.
Direct RDRAM™ Version 1.
01 (October 1999) On page 1 - Delete the part numbers of low power On page 32 - Add the data of CNFGA Register @ Figure 28 On page 33 - Add the data of CNFGB Register @ Figure 29 and correct the CORG4.
.
0 field of CNFGB register On page 44 - Add the Tj value from TBD to Max.
100°C @ Table 18 On page 46 - Add the ΘJC value from TBD to 0.
2°C/Watt @ Table 20 On page 55 - Add the current values for 356MHz and 300MHz RDRAM device Version 1.
02 (January 2000) * Change the part number of RDRAM Component according to New Code System since ’00.
Jan.
1st On page 45 - Reduce swing of VIH,CMOS & VIL,CMOS from “0.
5VCMOS±0.
6V“ to “0.
5VCMOS±0.
4V“ - Relax tS1 from 1.
0ns to “1.
25ns“ ( But, Keep tH1 as 1.
0ns) Page 0 Rev.
1.
02 Jan.
2000 K4R271669A/K4R441869A Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The 128/144Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits.
The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer rates while using conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.
25 ns per two bytes (10ns per sixteen bytes).
The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions.
The separate control and data buses with independent row and column control yield over 95% bus efficiency.
The Direct RDRAM's thirty-two banks suppor...


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