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K4R271669B-Nb(M)CcK8

Samsung semiconductor
Part Number K4R271669B-Nb(M)CcK8
Manufacturer Samsung semiconductor
Description 256K x 16/18 bit x 32s banks Direct RDRAMTM
Published Apr 7, 2005
Detailed Description K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11...
Datasheet PDF File K4R271669B-Nb(M)CcK8 PDF File

K4R271669B-Nb(M)CcK8
K4R271669B-Nb(M)CcK8

Overview
K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.
11 October 2000 Page -1 Version 1.
11 Oct.
2000 K4R271669B/K4R441869B Change History Version 1.
11 ( October 2000) - Preliminary * Based on the Rambus 1.
11ver.
128/144Mbit(32s banks) RDRAM Datasheet.
Direct RDRAM™ Page 0 Version 1.
11 Oct.
2000 K4R271669B/K4R441869B Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 8M words by 16 or 18 bits.
The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer rates while using conventional system and board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.
25 ns per two...


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