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K4S280432B

Part Number	K4S280432B
Manufacturer	Samsung semiconductor
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
Published	Apr 7, 2005
Detailed Description	K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Elec...
Datasheet	K4S280432B PDF File

Overview

K4S280432B CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.
0 Aug.
1999 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
0 Aug.
1999 K4S280432B 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4 & 8 Page ) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SD...

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