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K4S280832F-TL75

Part Number	K4S280832F-TL75
Manufacturer	Samsung semiconductor
Description	128Mb F-die SDRAM Specification
Published	Apr 7, 2005
Detailed Description	SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.2 November. 2003 *...
Datasheet	K4S280832F-TL75 PDF File

Overview

SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 128Mb F-die SDRAM Specification Revision 0.
2 November.
2003 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
2 November.
2003 SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 0.
0 (Agust, 2003) - First release.
Revision 0.
1 (November, 2003) - completed DC characteristics.
Revision 0.
2 (November, 2003) - Preliminary spec release.
Preliminary CMOS SDRAM Rev.
0.
2 November.
2003 SDRAM 128Mb F-die (x4, x8, x16) Preliminary CMOS SDRAM 8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K Cycle) GENERAL DESCRIPTION The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Ordering Information Part No.
K4S280432F-TC(L)75 K4S280832F-TC(L)75 K4S281632F-TC(L)60/75 Orgainization 32M x 4 16M x 8 8M x 16 Max Freq.
133MHz 133MHz 166MHz Interface LVTTL LVTTL LVTTL Package 54pin TSOP 54pin TSOP 54pin TSOP Organization 32Mx4 16Mx8 8Mx16 Row Address A0~A11 A0~A11 A0~...

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K4S280832F-TL75 128Mb F-die SDRAM Specification - Samsung semiconductor

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