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K4S281632D-NC60

Part Number	K4S281632D-NC60
Manufacturer	Samsung semiconductor
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Published	Apr 7, 2005
Detailed Description	K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electr...
Datasheet	K4S281632D-NC60 PDF File

Overview

K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev.
0.
1 Sept.
2001 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
1 Sept.
2001 K4S281632D Revision History Revision 0.
0 (Mar.
06, 2001) Revision 0.
1 (Sep.
06, 2001) • • CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed the Notes in Operating AC Parameter.
< Before > 5.
For 1H/1L, tRDL=1CLK and tDAL=1CLK+tRP is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
< After > 5.
In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
Rev.
0.
1 Sept.
2001 K4S281632D 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequen...

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