DatasheetsPDF.com

K4S281632E-TL75

Samsung semiconductor
Part Number K4S281632E-TL75
Manufacturer Samsung semiconductor
Description 128Mb E-die SDRAM Specification
Published Apr 7, 2005
Detailed Description SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electron...
Datasheet PDF File K4S281632E-TL75 PDF File

K4S281632E-TL75
K4S281632E-TL75

Overview
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.
2 May.
2003 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
2 May.
2003 SDRAM 128Mb E-die (x4, x8, x16) Revision History Revision 1.
0 (Nov.
2002) - First release.
CMOS SDRAM Revision 1.
1 (Apr.
2003) - x4/x8/x16 Merged spec.
Revision 1.
2 (May.
2003) - Delete -TC(L)7C Rev.
1.
2 May.
2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4 & 8 ) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for maskin • Auto & self refresh • 64ms refresh period (4K Cycl...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)