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K4S511632M-TC

Part Number	K4S511632M-TC
Manufacturer	Samsung semiconductor
Description	512Mbit SDRAM
Published	Apr 7, 2005
Detailed Description	K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Elect...
Datasheet	K4S511632M-TC PDF File

Overview

K4S511632M CMOS SDRAM 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.
3 May.
2002 Samsung Electronics reserves the right to change products or specification without notice.
Rev.
0.
3 May.
2002 K4S511632M Revision History Revision 0.
0 (Mar.
2001) Revision 0.
1 (Aug.
2001) Defined target DC characteristics.
CMOS SDRAM Revision 0.
2 (Dec.
2001) • • Changed "Target" to "Preliminary".
Redefined DC characteristics.
Revision 0.
3 (May.
2002) • Changed "Preliminary" to "Final".
Rev.
0.
3 May.
2002 K4S511632M 8M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with a...

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