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K4S560432E-TC75

Samsung semiconductor
Part Number K4S560432E-TC75
Manufacturer Samsung semiconductor
Description 256Mb E-die SDRAM Specification
Published Apr 7, 2005
Detailed Description SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung El...
Datasheet PDF File K4S560432E-TC75 PDF File

K4S560432E-TC75
K4S560432E-TC75

Overview
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.
3 September.
2003 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
3 September.
2003 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.
0 (May.
2003) - First release.
Revision 1.
1 (June.
2003) - Correct Typo Revision 1.
2 (June.
2003) - Added 166MHz speed bin in x16 Revision 1.
3 (September.
2003) - Corrected typo in ordering information.
CMOS SDRAM Rev.
1.
3 September.
2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (8K Cycle) GENERAL DESCRIPTION The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Ordering Information Part No.
K4S560432E-TC(L)75 K4S560832E-TC(L)75 K4S561632E-TC(L)60/75 Orgainization 64M x 4 32M x 8 16M x 16 Max Freq.
133MHz 133MHz 166MHz Interface LVTTL LVTTL LVTTL Package 54pin TSOP 54pin TSOP 54pin TSOP Organization 64Mx4 32Mx8 16Mx16 Row Address A0~A12 A0~A12 A0~A12 Column A...


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