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K4S561632E-TC60

Part Number	K4S561632E-TC60
Manufacturer	Samsung semiconductor
Description	256Mb E-die SDRAM Specification
Published	Apr 7, 2005
Detailed Description	SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung El...
Datasheet	K4S561632E-TC60 PDF File

Overview

SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.
3 September.
2003 * Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.
3 September.
2003 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.
0 (May.
2003) - First release.
Revision 1.
1 (June.
2003) - Correct Typo Revision 1.
2 (June.
2003) - Added 166MHz speed bin in x16 Revision 1.
3 (September.
2003) - Corrected typo in ordering information.
CMOS SDRAM Rev.
1.
3 September.
2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit wri...

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