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K6R1008C1A-C15

Samsung semiconductor
Part Number K6R1008C1A-C15
Manufacturer Samsung semiconductor
Description 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
Published Apr 7, 2005
Detailed Description PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out....
Datasheet PDF File K6R1008C1A-C15 PDF File

K6R1008C1A-C15
K6R1008C1A-C15

Overview
PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM Revision History Rev.
No.
Rev.
0.
0 Rev.
1.
0 History Initial release with Preliminary.
Release to final Data Sheet.
1.
1.
Delete Preliminary Update D.
C parameters.
2.
1.
Update D.
C parameters Previous spec.
ITEMS (12/15/17/20ns part) ICC 200/190/180/170mA ISB 30mA ISB1 10mA Draft Data Apr.
22th, 1995 Feb.
29th, 1996 Remark Preliminary Final Rev.
2.
0 Jul.
16th, 1996 Updated spec.
(12/15/17/20ns part) 170/165/165/160mA 25mA 8mA Jun.
2nd, 1997 Final Rev.
3.
0 Add Industrial Temperature Range parts and 300mil-SOJ PKG.
3.
1.
Add 32-Pin 300mil-SOJ Package.
3.
2.
Add Industrial Temperature Range parts with the same parameters as Commercial Temperature Range parts.
3.
2.
1.
Add K6R1008C1A parts for Industrial Temperature Range.
3.
2.
2.
Add ordering information.
3.
2.
3.
Add the condition for operating at Industrial Temp.
Range.
3.
3.
Add the test condition for VOH1 with VCC=5V±5% at 25°C 3.
4.
Add timing diagram to define tWP as ″(Timing Wave Form of Write Cycle(CS=Controlled)″ 4.
1.
Delete 17ns Part Final Rev.
4.
0 Feb.
25th, 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device.
If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1- Rev 4.
0 February 1998 PRELIMINARY K6R1008C1A-C, K6R1008C1A-I 128K x 8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time 12, 15, 20ns(Max.
) • Low Power Dissipation Standby (TTL) : 25mA(Max.
) (CMOS) : 8mA(Max.
) Operating K6R1008C1A-12 : 170mA(Max.
) K6R1008C1A-15 : 165mA(Max.
) K6R1008C1A-20 : 160mA(Max.
) • Single 5.
0V±10% Power Supply • TTL Compatible Inputs and Outputs • I/...


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