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K6R1008C1C-I10

Samsung semiconductor
Part Number K6R1008C1C-I10
Manufacturer Samsung semiconductor
Description 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
Published Apr 7, 2005
Detailed Description PRELIMINARY K6R1008C1C-C/C-L, K6R1008C1C-I/C-P Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Opera...
Datasheet PDF File K6R1008C1C-I10 PDF File

K6R1008C1C-I10
K6R1008C1C-I10

Overview
PRELIMINARY K6R1008C1C-C/C-L, K6R1008C1C-I/C-P Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).
Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM Revision History Rev.
No.
Rev.
0.
0 Rev.
1.
0 History Initial release with Preliminary.
Release to Final Data Sheet.
1.
1.
Delete Preliminary.
2.
2.
Added Data Retention Characteristics.
Add 10ns part.
Delete 20ns speed bin Draft Data Aug.
5.
1998 Mar.
3.
1999 Remark Preliminary Final Rev.
2.
0 Rev.
3.
0 Mar.
3.
2000 Sep.
24.
2001 Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device.
If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1- Revision 3.
0 September 2001 PRELIMINARY K6R1008C1C-C/C-L, K6R1008C1C-I/C-P FEATURES • Fast Access Time 10,12,15ns(Max.
) • Low Power Dissipation Standby (TTL) : 30mA(Max.
) (CMOS) : 5mA(Max.
) 0.
5mA(Max.
) L-ver.
only Operating K6R1008C1C-10 : 80mA(Max.
) K6R1008C1C-12 : 75mA(Max.
) K6R1008C1C-15 : 73mA(Max.
) • Single 5.
0V±10% Power Supply • TTL Compatible Inputs and Outputs • I/O Compatible with 3.
3V Device • Fully Static Operation - No Clock or Refresh required • Three State Outputs • 2V Minimum Data Retention: L-ver.
only • Center Power/Ground Pin Configuration • Standard Pin Configuration K6R1008C1C-J : 32-SOJ-400 K6R1008C1C-T : 32-TSOP2-400CF CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM(5.
0V Operating) GENERAL DESCRIPTION The K6R1008C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.
The K6R1008C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.
The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circu...


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