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K6X8016T3B

Samsung semiconductor
Part Number K6X8016T3B
Manufacturer Samsung semiconductor
Description 512Kx16 bit Low Power Full CMOS Static RAM
Published Apr 7, 2005
Detailed Description K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Org...
Datasheet PDF File K6X8016T3B PDF File

K6X8016T3B
K6X8016T3B

Overview
K6X8016T3B Family CMOS SRAM 512Kx16 bit Low Power Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 2.
7~3.
6V • Low Data Retention Voltage: 1.
5V(Min) • Three state outputs • Package Type: 44-TSOP2-400F GENERAL DESCRIPTION The K6X8016T3B families are fabricated by SAMSUNG′s advanced full CMOS process technology.
The families support various operating temperature range for user flexibility of system design.
The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed K6X8016T3B-F K6X8016T3B-Q Industrial(-...


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