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K7R321884M

Samsung semiconductor
Part Number K7R321884M
Manufacturer Samsung semiconductor
Description 1M x 36 & 2M x 18 QDR II b4 SRAM
Published Apr 7, 2005
Detailed Description K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bi...
Datasheet PDF File K7R321884M PDF File

K7R321884M
K7R321884M

Overview
K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History Rev.
No.
History 0.
0 1.
Initial document.
0.
1 1.
Package dimension modify.
P.
20 from 13mmx15mm to 15mmx17mm 0.
2 1.
Pin name change from DLL to Doff.
2.
Vddq range change from 1.
5V to 1.
5V~1.
8V.
3.
Update JTAG test conditions.
4.
Reserved pin for high density name change from NC to Vss/SA 5.
Delete AC test condition about Clock Input timing Reference Level 6.
Delete clock description on page 2 and add HSTL I/O comment 0.
3 1.
Update current characteristics in DC electrical characteristics 2.
Change AC timing characteristics 3.
Update JTAG instruction coding and diagrams 0.
4 1.
Add -FC25 part(AC Characteristics) 2.
Add AC electrical characteristics.
3.
Change AC timing characteristics 4.
Change DC electrical characteristics(ISB1) 0.
5 1.
Change the data Setup/Hold time.
2.
Change the Access Time.
(tCHQV, tCHQX, etc.
) 3...


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