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K9F1G08Q0A

Samsung semiconductor
Part Number K9F1G08Q0A
Manufacturer Samsung semiconductor
Description FLASH MEMORY
Published Apr 7, 2005
Detailed Description www.DataSheet4U.com K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision Histor...
Datasheet PDF File K9F1G08Q0A PDF File

K9F1G08Q0A
K9F1G08Q0A

Overview
www.
DataSheet4U.
com K9F1G08Q0A K9F1G08U0A FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.
0 0.
1 History 1.
Initial issue 1.
The tADL(Address to Data Loading Time) is added.
- tADL Minimum 100ns (Page 11, 23~26) - tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle at program operation.
2.
Added Addressing method for program operation Draft Date Aug.
24.
2003 Jan.
27.
2004 Remark Advance Preliminary 0.
2 0.
3 1.
Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1.
PKG(TSOP1, WSOP1) Dimension Change Apr.
23.
2004 May.
19.
2004 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions about device.
If you have any questions, please contact the SAMSUNG branch office near your office.
1 www.
DataSheet4U.
com K9F1G08Q0A K9F1G08U0A FLASH MEMORY 128M x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9F1G08Q0A K9F1G08U0A-Y,P K9F1G08U0A-V,F Vcc Range 1.
70 ~ 1.
95V 2.
7 ~ 3.
6V X8 Organization PKG Type Only available in MCP TSOP1 WSOP1 FEATURES • Voltage Supply -1.
8V device(K9F1G08Q0A): 1.
70V~1.
95V -3.
3V device(K9F1G08U0A): 2.
7 V ~3.
6 V • Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : 2K-Byte - Random Read : 25µs(Max.
) - Serial Access : 30ns(Min.
) : (K9F1G08U0A) 50ns(Min.
) : (K9F1G08Q0A) • Fast Write Cycle Time - Program time : 300µs(Typ.
) - Block Erase Time : 2ms(Typ.
) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data R...


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