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K9F1G16Q0M

Samsung semiconductor
Part Number K9F1G16Q0M
Manufacturer Samsung semiconductor
Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Published Apr 7, 2005
Detailed Description K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16...
Datasheet PDF File K9F1G16Q0M PDF File

K9F1G16Q0M
K9F1G16Q0M

Overview
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.
0 0.
1 History 1.
Initial issue 1.
Iol(R/B) of 1.
8V is changed.
- min.
value : 7mA --> 3mA - Typ.
value : 8mA --> 4mA 2.
AC parameter is changed.
tRP(min.
) : 30ns --> 25ns 3.
A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
Draft Date July.
5.
2001 Nov.
5.
2001 Remark Advance Dec.
4.
2001 0.
2 1.
ALE status fa...


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