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K9F2808Q0B-DIB0

Samsung semiconductor
Part Number K9F2808Q0B-DIB0
Manufacturer Samsung semiconductor
Description 16M x 8 Bit NAND Flash Memory
Published Apr 7, 2005
Detailed Description K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x...
Datasheet PDF File K9F2808Q0B-DIB0 PDF File

K9F2808Q0B-DIB0
K9F2808Q0B-DIB0


Overview
K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No.
History 0.
0 0.
1 0.
2 Initial issue.
K9F2808U0B(3.
3V device)’s qualification is finished K9F2808Q0B (1.
8V device) - Changed typical read operation current (Icc1) from 8mA to 5mA - Changed typical program operation current (Icc2) from 8mA to 5mA - Changed typical erase operation current (Icc3) from 8mA to 5mA - Changed typical program time(tPROG) from 200us to 300us - Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns - Changed CLE hold time(tCLH) from 10ns to 15ns - Changed CE hold time(tCH) from 10ns to 15ns - C...



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