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K9F2808U0B-D

Samsung semiconductor
Part Number K9F2808U0B-D
Manufacturer Samsung semiconductor
Description 16M x 8 Bit NAND Flash Memory
Published Apr 7, 2005
Detailed Description K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x...
Datasheet PDF File K9F2808U0B-D PDF File

K9F2808U0B-D
K9F2808U0B-D

Overview
K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No.
History 0.
0 0.
1 0.
2 Initial issue.
K9F2808U0B(3.
3V device)’s qualification is finished K9F2808Q0B (1.
8V device) - Changed typical read operation current (Icc1) from 8mA to 5mA - Changed typical program operation current (Icc2) from 8mA to 5mA - Changed typical erase operation current (Icc3) from 8mA to 5mA - Changed typical program time(tPROG) from 200us to 300us - Changed ALE to RE Delay (ID read, tAR1) from 100ns to 20ns - Changed CLE hold time(tCLH) from 10ns to 15ns - Changed CE hold time(tCH) from 10ns to 15ns - Changed ALE hold time(tALH) from 10ns to 15ns - Changed Data hold time(tDH) from 10ns to 15ns - Changed CE Access time(tCEA) from 45ns to 60ns - Changed Read cycle time(tRC) from 50ns to 70ns - Changed Write Cycle time(tWC) from 50ns to 70ns - Changed RE Access time(tREA) from 35ns to 40ns - Changed RE High Hold time(tREH) from 15ns to 20ns - Changed WE High Hold time(tWH) from 15ns to 20ns 1.
Device Code is changed - TBGA package information : ’B’ --> ’D’ ex) K9F2808Q0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0 K9F2808U0B-BCB0 ,BIB0 --> K9F2808Q0B-DCB0,DIB0 2.
V IH ,VIL of K9F2808Q0B(1.
8 device) is changed (before revision) Input High Voltage Input Low Voltage, All inputs V IH I/O pins Except I/O pins VccQ-0.
4 V CC-0.
4 0 (after revision) I/O pins Input High Voltage V IH Except I/O pins Input Low Voltage, All inputs V IL V CC-0.
4 -0.
3 VccQ-0.
4 VccQ +0.
3 VCC +0.
3 0.
4 VccQ VCC 0.
4 Draft Date May 28’th 2001 Jun.
30th 2001 Remark Advance Jul.
30th 2001 K9F2808Q0B : Preliminary 0.
3 Aug.
23th 2001 V IL Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.
intl.
samsungsemi.
com/Memory/Flash/datasheets.
html The attached datasheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the ...


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