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K9F6408U0A-TIB0

Samsung semiconductor
Part Number K9F6408U0A-TIB0
Manufacturer Samsung semiconductor
Description 8M x 8 Bit NAND Flash Memory
Published Apr 7, 2005
Detailed Description K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No...
Datasheet PDF File K9F6408U0A-TIB0 PDF File

K9F6408U0A-TIB0
K9F6408U0A-TIB0



Overview
K9F6408U0A-TCB0, K9F6408U0A-TIB0 Document Title 8M x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No.
History 0.
0 0.
1 0.
2 Initial issue.
1.
Revised real-time map-out algorithm(refer to technical notes) Changed device name 1) KM29U64000AT -> K9F6408U0A-TCB0 2) KM29U64000AIT -> K9F6408U0A-TIB0 Changed the following items ITEM Program Time Number of partial program in the same page Before(M-die) 1,000us(Max.
) 10 Cycles After(A-die) 500us(Max.
) Main Array: 2 Cycles Spare Array: 3 Cycles Draft Date April 10th 1999 July 23th 1999 Sep.
15th 1999 Remark Preliminary Preliminary Preliminary 0.
3 Changed the following items ITEM Pin Configuration(23th Pin) Absolute maximum Ratings - Voltage on any pin relative to Vss Recommended operating conditions - Supply voltage Before(M-die) VccQ Vin : -0.
6V to 6V Vcc : -0.
6V to 4.
6V VccQ : -0.
6V to 6V VccQ : 2.
7V(Min.
) / 5.
5V(Max.
) I/O pins : 2.
0V(Min.
) VccQ+0.
3V(Max.
) Except I/O pins : 2.
0V(Min.
) / Vcc+0.
3V(Max.
) 0.
8V and 2.
0V After(A-die) Vcc Vin : -0.
6V to 4.
6V Vcc : -0.
6V to 4.
6V Oct.
20th 1999 Preliminary Do not support VccQ DC and operating characteristics - Input high voltage(VIH) All inputs : 2.
0V(Min.
) / Vcc+0.
3V(Max.
) Input and output timing levels 1.
5V 0.
4 Changed the following item ITEM Data transfer from Cell to Register (tR) Before(M-die) 7us(Max.
) After(A-die) 10us(Max.
) Jan.
10th 2000 Final 0.
5 1.
Changed invalid block(s) marking method prior to shipping - The invalid block(s) information is written the 1st or 2nd page of the invalid block(s) with 00h data --->The invalid block(s) status is defined by the 6th byte in the spare area.
Samsung makes sure that either the 1st or 2nd page of every invalid block has non-FFh data at the column address of 517.
2.
Changed SE pin description - SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming.
July 17th 2000 Note : For more detailed features and specifications including FAQ, please refer to Samsun...



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