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K9F8008W0M-TCB0

Part Number	K9F8008W0M-TCB0
Manufacturer	Samsung semiconductor
Description	1M x 8 bit NAND Flash Memory
Published	Apr 7, 2005
Detailed Description	K9F8008W0M-TCB0, K9F8008W0M-TIB0 Document Title 1M x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No...
Datasheet	K9F8008W0M-TCB0 PDF File

Overview

K9F8008W0M-TCB0, K9F8008W0M-TIB0 Document Title 1M x 8 bit NAND Flash Memory FLASH MEMORY Revision History Revision No.
0.
0 1.
0 History Data Sheet 1997 Data Sheet 1998 1.
Changed tBERS parameter : 5ms(Typ.
) → 2ms(Typ.
) 10ms(Max.
) → 4ms(Max.
) 2.
Changed tPROG parameter : 1.
5ms(Max.
) → 1.
0ms(Max.
) Data sheet 1998 1.
Cjanged DC and Operating Characteristics Parameter Burst Read Operating Current Program Eraase Stand-by Current (CMOS) Input Leakage Current Output Leakage Current Vcc=2.
7V~3.
6V Typ 10 → 5 10 → 5 10 → 5 5 → 10 Max 20 → 10 20 → 10 20 → 10 50 10 → ±10 10 → ±10 Vcc=3.
6V~5.
5V Typ 15 → 10 15 → 10 15 → 10 10 Max 30 → 20 30 → 20 30 → 20 100 → 50 10 → ±10 10 → ±10 µA mA Unit Draft Date...

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K9F8008W0M-TCB0 1M x 8 bit NAND Flash Memory - Samsung semiconductor

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