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K9K1208U0M-YIB0

Samsung semiconductor
Part Number K9K1208U0M-YIB0
Manufacturer Samsung semiconductor
Description 64M x 8 Bit NAND Flash Memory
Published Apr 7, 2005
Detailed Description K9K1208U0M-YCB0, K9K1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 FLASH ME...
Datasheet PDF File K9K1208U0M-YIB0 PDF File

K9K1208U0M-YIB0
K9K1208U0M-YIB0


Overview
K9K1208U0M-YCB0, K9K1208U0M-YIB0 Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.
0 FLASH MEMORY History 1.
Initial issue - The followings are disprepancy items between K9K5608U0M (256Mb DDP) and K9K1208U0M (512Mb DDP).
AC Characteristics Read Cycle Time (tRC) Write Cycle Time (tWC) WE High hold Time (tWH) Data Hold Time (tDH) RE High Hold Time (tREH) K9K5608U0M Min.
50ns Min.
50ns Min.
15ns Min.
10ns Min.
15ns K9K1208U0M Min.
60ns Min.
60ns Min.
25ns Min.
15ns Min.
25ns Draft Date June 19th 2000 Remark Preliminary 0.
1 1.
Changed Input / Output Capacitance - Input / Output Capacitance (Max.
) : 20 pF --> 30pF - Input Capacitance (Max.
) : 20 pF --> 30pF 1.
Chan...



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