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K9K1G08U0M-YCB0

Part Number	K9K1G08U0M-YCB0
Manufacturer	Samsung semiconductor
Description	128M x 8 Bit NAND Flash Memory
Published	Apr 7, 2005
Detailed Description	K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 ...
Datasheet	K9K1G08U0M-YCB0 PDF File

Overview

K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Document Title 128M x 8 Bit NAND Flash Memory Revision History Revision No 0.
0 0.
1 0.
2 FLASH MEMORY History 1.
Initial issue 1.
[Page 31] device code (76h) --> device code (79h) 1.
Powerup sequence is added : Recovery time of minimum 1 µs is required before internal circuit gets ready for any command sequences Draft Date Apr.
7th 2001 Jul.
3rd 2001 Remark Jul.
23th 2001 2.
5V VCC High ≈ 2.
5V W P W E 2.
AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
3.
[Page28] Only address A 14 to A 25 is valid while A9 to A 13 is ignored --> Only address A 14 to A 26 is valid while A 9 to A 13 is ignored 0.
3 (page 30) Sep.
13th 2001 A14 and A15 must be the sa...

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K9K1G08U0M-YCB0 128M x 8 Bit NAND Flash Memory - Samsung semiconductor

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