DatasheetsPDF.com

SMBT3904UPN

Infineon Technologies AG
Part Number SMBT3904UPN
Manufacturer Infineon Technologies AG
Description NPN/PNP Silicon Switching Transistor Array
Published Apr 7, 2005
Detailed Description SMBT3904UPN NPN/PNP Silicon Switching Transistor Array  High current gain  Low collector-emitter saturation voltage  ...
Datasheet PDF File SMBT3904UPN PDF File

SMBT3904UPN
SMBT3904UPN

Overview
SMBT3904UPN NPN/PNP Silicon Switching Transistor Array  High current gain  Low collector-emitter saturation voltage  Two (galvanic) internal isolated NPN/PNP 5 6 4 Transistors in one package 3 2 1 VPW09197 Tape loading orientation Top View 6 5 4 W1s 1 2 3 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side SC74_Tape Marking on SC74 package (for example W1s) corresponds to pin 1 of device C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07177 Type SMBT3904UPN Maximum Ratings Parameter Marking s3P Pin Configuration Package 1 = E 2 = B 3 = C 4 = E 5 = B 6 = C SC74 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 5 200 330 150 -65 .
.
.
150 mA mW °C Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 105 °C Junction temperature Storage temperature Thermal Resistance Thermal resistance, chip case1) RthJC  135 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-21-2002 SMBT3904UPN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min.
DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain 1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat 0.
65 0.
85 0.
95 VCEsat 0.
25 0.
4 hFE 40 70 100 60 30 300 ICBO 50 V(BR)EBO 5 V(BR)CBO 40 V(BR)CEO 40 typ.
max.
Unit V nA - V 1) Pulse test: t < 300s; D < 2% 2 Aug-21-2002 SMBT3904UPN Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter min.
AC Characteristics per Transistor Transition...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)