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SI8902EDB

Part Number	SI8902EDB
Manufacturer	Vishay Siliconix
Description	Bi-Directional N-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) r...
Datasheet	SI8902EDB PDF File

Overview

Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.
045 @ VGS = 4.
5 V 20 0.
048 @ VGS = 3.
7 V 0.
057 @ VGS = 2.
5 V 0.
072 @ VGS = 1.
8 V IS1S2 (A) 5.
0 4.
8 4.
4 3.
9 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale Packaging Reduces Footprint Area, Profile (0.
65 mm) and On-Resistance Per Footprint Area APPLICATIONS D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices S1 MICRO FOOTt Bump Side View Backside View S2 5 4 S2 Pin 1 Identifier G1 4 kW 8902E xxx G2 6 3 G1 Device Marking: 8902E = P/N Code xxx = Date/Lot Traceability Code G2 4 kW S1 1 2 S1 S2 N-Channel ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Source1—Source2 Voltage Gate-Source Voltage Continuous Source1—Source2 Current (TJ = 150_C)a Pulsed Source1—Source2 Current Maximum Power Dissipationa Operating Junction and Storage Temper...

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SI8902EDB Bi-Directional N-Channel MOSFET - Vishay Siliconix

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