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SI9435BDY

Vishay Siliconix
Part Number SI9435BDY
Manufacturer Vishay Siliconix
Description P-Channel 30-V (D-S) MOSFET
Published Apr 8, 2005
Detailed Description Si9435BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.042 @ VGS = −...
Datasheet PDF File SI9435BDY PDF File

SI9435BDY
SI9435BDY

Overview
Si9435BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
042 @ VGS = −10 V −30 0.
055 @ VGS = −6 V 0.
070 @ VGS = −4.
5 V FEATURES ID (A) −5.
7 −5.
0 −4.
4 D TrenchFETr Power MOSFET S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si9435BDY Si9435BDY-T1 (with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −5.
7 −4.
6 −30 −2.
3 2.
5 1.
6 −55 to 150 −4.
1 −3.
2 A −1.
1 1.
3 0.
8 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 24 Maximum 50 95 30 Unit _C/W Document Number: 72245 S-32274—Rev.
B, 03-Nov-03 www.
vishay.
com 1 Si9435BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS ID(on) D( ) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 70_C VDS v −10 V, VGS = −10 V VDS v −5 V, VGS = −4.
5 V VGS = −10 V, ID = −5.
7 A Drain-Source On-State Resistanceb rDS(on) VGS = −6 V, ID = −5 A VGS = −4.
5 V, ID = −4.
4 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = −15 V, ID = −5.
7 A IS = −2.
3 A, VGS = 0 V −20 −5 0.
033 0.
043 0.
056 13 −0.
8 −1.
1 0.
042 0.
055 0.
070 S V W −1.
0 −3.
0 "100 −1 −5 V nA mA Symbol Test Condition Min Typa Max Unit On State Drain Currentb On-State A Dynamica Total Gate Charge Gate-Source Charge Gate-Dr...


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