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SI9926BDY

Vishay Siliconix
Part Number SI9926BDY
Manufacturer Vishay Siliconix
Description Dual N-Channel 2.5-V (G-S) MOSFET
Published Apr 8, 2005
Detailed Description Si9926BDY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.020 at VGS = 4...
Datasheet PDF File SI9926BDY PDF File

SI9926BDY
SI9926BDY

Overview
Si9926BDY Vishay Siliconix Dual N-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.
020 at VGS = 4.
5 V 0.
030 at VGS = 2.
5 V ID (A) 8.
2 6.
7 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si9926BDY-T1-E3 (Lead (Pb)-free) Si9926BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 8.
2 6.
2 6.
5 4.
9 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.
7 0.
95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.
0 1.
14 1.
3 0.
72 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 52 90 32 Maximum 62.
5 110 40 Unit °C/W Document Number: 72278 S09-0870-Rev.
C, 18-May-09 www.
vishay.
com 1 Si9926BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.
5 V Drain-Source On-State Resistancea RDS(on) VGS = 4.
5 V, ID = 8.
2 A VGS = 2.
5 V, ID = 3.
3 A Forward Transconductancea gfs VDS = 15 V, ID = 8.
2 A Diode Forward Voltagea VSD IS = 1.
7 A, VGS = 0 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 10 V, VGS = 4.
5 V,...


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