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SI9953DY

Vishay Siliconix
Part Number SI9953DY
Manufacturer Vishay Siliconix
Description Dual P-Channel 20-V (D-S) MOSFET
Published Apr 8, 2005
Detailed Description Si9953DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.25 @ VGS = –10 V...
Datasheet PDF File SI9953DY PDF File

SI9953DY
SI9953DY

Overview
Si9953DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.
25 @ VGS = –10 V 0.
40 @ VGS = –4.
5 V ID (A) "2.
3 "1.
5 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –20 "20 "2.
3 "1.
8 "10 –1.
7 2.
0 Unit V A ...


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