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SIDC24D30SIC3

Infineon Technologies AG
Part Number SIDC24D30SIC3
Manufacturer Infineon Technologies AG
Description Silicon Carbide Schottky Diode
Published Apr 8, 2005
Detailed Description SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: • • • • • Revolutionary semiconductor material Silicon Carbide Sw...
Datasheet PDF File SIDC24D30SIC3 PDF File

SIDC24D30SIC3
SIDC24D30SIC3

Overview
SIDC24D30SIC3 Silicon Carbide Schottky Diode FEATURES: • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery Applications: • SMPS, snubber, secondary side rectification A C Chip Type SIDC24D30SIC3 VBR 300V IF 10A Die Size 1.
706 x 1.
38 mm2 Package sawn on foil Ordering Code Q67050-A4163A103 MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.
706...


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