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SK702

Part Number	SK702
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published	Apr 8, 2005
Detailed Description	polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	SK702 PDF File

Overview

polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 90.
0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 190 Watts Junction to Case Thermal Resistance o 0.
85 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V 11.
5 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 TYP 90.
0 WATTS OUTPUT ) MAX...

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