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SKB02N120

Part Number	SKB02N120
Manufacturer	Infineon Technologies AG
Description	IGBT
Published	Apr 8, 2005
Detailed Description	SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number o...
Datasheet	SKB02N120 PDF File

Overview

SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s.
 lower Eoff compared to previous generation  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1 for target applications  Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ C G E PG-TO-263-3-2 Type SKB02N120 VCE IC Eoff Tj Marking Package 1200V 2A 0.
11mJ 150C K02N120 PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE  1200V, Tj  150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, 100VVCC1200V, Tj  150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, reflow soldering, MSL1 Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj , Tstg Ts Value 1200 6.
2 2.
8 9.
6 9.
6 Unit V A 4.
5 2 9 20 10 62 -55.
.
.
+150 260 V s W C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Rev.
2.
4 12.
06.
2013 SKB02N120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Symbol RthJC RthJCD Conditions Max.
Value 2.
0 4.
5 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate...

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SKB02N120 IGBT - Infineon Technologies AG

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