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SKM200GB124

ETC
Part Number SKM200GB124
Manufacturer ETC
Description IGBT
Published Apr 8, 2005
Detailed Description Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM ...
Datasheet PDF File SKM200GB124 PDF File

SKM200GB124
SKM200GB124

Overview
Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM = –ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min.
DIN 40040 DIN IEC 68 T.
1 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms tp = 10 ms; sin.
; Tj = 150 °C tp = 10 ms; Tj = 150 °C Values Units 1200 1200 290 / 200 580 / 400 ± 20 1350 –40 .
.
.
+150 (125) 2500 Class F 40/125/56 195 / 130 580 / 400 1450 10 500 V V A A V W °C V SEMITRANS® M Low Loss IGBT Modules SKM 200 GB 124 D Inverse Diode A A A A2s SEMITRANS 3 Characteristics Symbol Conditions 1) V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VF = VEC VF = VEC VTO rt IRRM Qrr Rthjc Rthjc Rthch VGE = 0, IC = 4 mA VGE = VCE, IC = 6 mA Tj = 25 °C VGE = 0 VCE = VCES Tj = 125 °C VGE = 20 V, VCE = 0 IC = 150 A VGE = 15 V; IC = 200 A Tj = 25 (125) °C VCE = 20 V, IC = 150 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = –15 V / +15 V3) IC = 150 A, ind.
load RGon = RGoff = 7Ω Tj = 125 °C min.
typ.
– 5,5 0,4 12 – 2,1(2,4) 2,5(3,0) – – 11 1,6 0,8 – 75 50 520 50 21 19 2,0(1,8) 2,25(2,05) 1,1 – 78 19,5 – – – max.
– 6,5 14 – 0,32 2,45(2,85) – – 700 15 2 1 20 – – – – – – 2,5 – 1,2 7 – – 0,09 0,25 0,038 Units V V mA mA µA V V S pF nF nF nF nH ns ns ns ns mWs mWs V V V mΩ A µC °C/W °C/W °C/W ≥ VCES 4,5 – – – – – 62 – – – – – – – – – – – – – – – – – – – – GB Features • MOS input (voltage controlled) • N channel, homogeneous Silicon structure NPT-IGBT (Non punch through) • Low saturation voltage • Low inductance case • Low tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Latch-up free • Fast & soft inverse CAL diodes 8) • Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould • Large clearance (12 mm) and creepage distances (20 mm) Typical Applications → B 6 – 161 • Switching (not for linear use) • Inverter...


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