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SGB10N60A

Infineon Technologies AG
Part Number SGB10N60A
Manufacturer Infineon Technologies AG
Description Fast IGBT
Published Apr 8, 2005
Detailed Description SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction los...
Datasheet PDF File SGB10N60A PDF File

SGB10N60A
SGB10N60A

Overview
SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ C G E PG-TO-263-3-2 Type SGB10N60A VCE IC VCE(sat) Tj Marking Package 600V 10A 2.
3V 150°C G10N60A PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE ...


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