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SGL-0163

ETC
Part Number SGL-0163
Manufacturer ETC
Description 800-1000 MHZ LOW NOISE AMPLIFIER 50 OHM SILICON GERMANIUM
Published Apr 8, 2005
Detailed Description Product Description Stanford Microdevices’ SGL-0163 is a high performance cascadeable 50-ohm low noise amplifier designe...
Datasheet PDF File SGL-0163 PDF File

SGL-0163
SGL-0163

Overview
Product Description Stanford Microdevices’ SGL-0163 is a high performance cascadeable 50-ohm low noise amplifier designed for operation at voltages as low as 2.
5V.
The SGL-0163 can be operated at 3V for low power or 4V for medium power applications.
This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz.
Internally matched to 50 Ohm impedance, the SGL-0163 requires only an RF choke, DC blocking and bypass capacitors for external components.
This device has an internal temperature compensation circuit and can be operated directly from 3-4V supply.
Small Signal Gain vs.
Frequency 20 15 Preliminary Preliminary SGL-0163 800-1000 MHz Low Noise Amplifier 50 Ohm, Silicon Germanium 10 5 0 800 850 900 950 1000 3V,11mA 4V,25mA Product Features • Low Noise Figure • High Input Intercept • Internal Temp.
Compensation Circuit • Internally Matched to 50 W • Unconditionally Stable • Low Power Consumption • Single Voltage Supply • Small Package: SOT-363 Applications • Receivers • Cellular, Fixed Wireless, Land Mobile U nits V cc = 3V Min.
V cc = 3V Ty p.
5.
0 6.
4 13.
5 15.
0 1.
1 1.
8:1 1.
7:1 20.
6 8.
0 11.
0 255 14.
0 16.
5 V cc = 3V Max.
V cc = 4V Ty p.
11.
0 11.
8 15.
7 1.
5 1.
5:1 1.
6:1 20.
7 25.
0 255 dB Frequency MHz Sy mbol P 1dB IIP3 S 21 NF S 12 ID Rth, j-l Parameters: Test C onditions: Z0 = 50 Ohms, T = 25ºC Output Power at 1dB C ompressi on Input Thi rd Order Intercept Poi nt Tone spaci ng = 1 MHz Small Si gnal Gai n Noi se Fi gure, ZS = 50 Ohms Input VSWR Output VSWR Reverse Isolati on D evi ce C urrent Thermal Resi stance (juncti on - lead) f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz f = 900 MHz dB m dB m dB dB dB mA o C /W The information provided herein is believed to be reliable at press time.
Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, an...


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