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SGW20N60HS

Infineon Technologies AG
Part Number SGW20N60HS
Manufacturer Infineon Technologies AG
Description High Speed IGBT in NPT-technology
Published Apr 8, 2005
Detailed Description SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit...
Datasheet PDF File SGW20N60HS PDF File

SGW20N60HS
SGW20N60HS

Overview
SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • High ruggedness, temperature stable behaviour Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ VCE 600V 600V IC 20 20 Eoff 240µJ 240µJ Tj 150°C 150°C Package TO220AB TO-247AC Ordering Code Q67040-S4498 Q67040-S4499 P-TO-220-3-1 (TO-220AB) P-TO-247-3-1 (TO-247AC) C G E Type SGP20N60HS SGW20N60HS Maximum Ratings Parameter Symbol VCE IC Value 600 36 20 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage sta...


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