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SI1013R

Vishay Siliconix
Part Number SI1013R
Manufacturer Vishay Siliconix
Description P-Channel MOSFET
Published Apr 8, 2005
Detailed Description P-Channel 1.8 V (G-S) MOSFET Si1013R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V -...
Datasheet PDF File SI1013R PDF File

SI1013R
SI1013R

Overview
P-Channel 1.
8 V (G-S) MOSFET Si1013R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.
2 at VGS = - 4.
5 V - 20 1.
6 at VGS = - 2.
5 V 2.
7 at VGS = - 1.
8 V ID (mA) - 350 - 300 - 150 SC-75A or SC-89 G1 S2 Top View 3D SC-75A (SOT-416): Si1013R - Marking Code D SC-89 (SOT-490): Si1013X - Marking Code B Ordering Information: Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • High-Side Switching • Low On-Resistance: 1.
2  • Low Threshold: 0.
8 V (Typ.
) • Fast Switching Speed: 14 ns • 1.
8 V Operation • TrenchFET® Power MOSFETs • 2000 V ESD Protection • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta TA = 25 °C TA = 85 °C ID IDM - 400 - 300 - 1000 - 350 - 275 Continuous Source Current (Diode Conduction)b IS - 275 - 250 Maximum Power Dissipationb for SC-75 Maximum Power Dissipationb for SC-89 TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C PD 175 150 90 80 275 250 160 140 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 Notes: a.
Pulse width limited by maximum junction temperature.
b.
Surface mounted on FR4 board.
Unit V mA mW °C V Document Number: 71167 S10-2432-Rev.
D, 25-Oct-10 www.
vishay.
com 1 Si1013R/X Vishay Siliconix SPECIFICATIONS (TA = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions...


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