DatasheetsPDF.com

SI2308DS

Vishay Siliconix
Part Number SI2308DS
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Apr 8, 2005
Detailed Description N-Channel 60-V (D-S) MOSFET Si2308DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.16 at VGS = 10 V 0.2...
Datasheet PDF File SI2308DS PDF File

SI2308DS
SI2308DS

Overview
N-Channel 60-V (D-S) MOSFET Si2308DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 0.
16 at VGS = 10 V 0.
22 at VGS = 4.
5 V ID (A) 2.
0 1.
7 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested TO-236 (SOT-23) G1 S2 3D Top View Si2308DS (A8)* * Marking Code Ordering Information: Si2308DS-T1 Si2308DS-T1-E3 (Lead (Pb)-free) Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID Pulsed Drain Currentb IDM Continuous Source Current (Diode Conduction)a IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 60 ± 20 2.
0 1.
6 10 1.
0 1.
25 0.
80 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc Notes: a.
Surface Mounted on FR4 board, t ≤ 5 s.
b.
Pulse width limited by maximum junction temperature.
c.
Surface Mounted on FR4 board.
Symbol RthJA For SPICE model information via the Worldwide Web: www.
vishay.
com/www/product/spice.
htm * Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70797 S09-0133-Rev.
D, 02-Feb-09 Maximum 100 166 Unit °C/W www.
vishay.
com 1 Si2308DS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≥ 4.
5 V, VGS = 10 V VDS ≥ 4.
5 V, VGS = 4.
5 V Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 2.
0 A VGS = 4.
5 V, ID = 1.
7 A Forward Tran...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)