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SI3442BDV

Vishay Siliconix
Part Number SI3442BDV
Manufacturer Vishay Siliconix
Description N-Channel 2.5-V (G-S) MOSFET
Published Apr 8, 2005
Detailed Description Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.057 @ VGS = 4.5 V 0.0...
Datasheet PDF File SI3442BDV PDF File

SI3442BDV
SI3442BDV

Overview
Si3442BDV Vishay Siliconix N-Channel 2.
5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.
057 @ VGS = 4.
5 V 0.
090 @ VGS = 2.
5 V ID (A) 4.
2 3.
4 TSOP-6 Top View 1 3 mm 6 5 (3) G 4 (1, 2, 5, 6) D 2 3 2.
85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3 Marking Code: 2Bxxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 20 "12 4.
2 3.
4 20 1.
4 1.
67 1.
07 Steady State Unit V 3.
0 2.
4 A 0.
72 0.
86 0.
55 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on FR4 Board, t v 5 sec.
For SPICE model information via the Worldwide Web: http://www.
vishay.
com/www/product/spice.
htm Document Number: 72504 S-40424—Rev.
C, 15-Mar-04 www.
vishay.
com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 70 Maximum 100 145 85 Unit _C/W 1 Si3442BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.
5 V VDS = 5 V, VGS = 2.
5 V VGS = 4.
5 V, ID = 4 A VGS = 2.
5 V, ID = 3.
4 A VDS = 10 V, ID = 4.
0 A IS = 1.
6 A, VGS = 0 V 10 4 0.
045 0.
070 11.
3 0.
75 1.
2 0.
057 0.
090 W S V 0.
6 1.
8 "100 1 5 V nA mA Symbol Test Condition Min Typ Max Unit A rDS(on) gfs VSD Dynamicb Total Gate Charge Gate-Source Charge Gate-Dr...


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