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SI3905DV

Part Number	SI3905DV
Manufacturer	Vishay Siliconix
Description	Dual P-Channel 8-V (D-S) MOSFET
Published	Apr 8, 2005
Detailed Description	Si3905DV New Product Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.125 @ VGS ...
Datasheet	SI3905DV PDF File

Overview

Si3905DV New Product Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
125 @ VGS = –4.
5 V –8 8 0.
175 @ VGS = –2.
5 V 0.
265 @ VGS = –1.
8 V ID (A) "2.
5 "2.
0 "1.
7 S1 S2 TSOP-6 Top View G1 1 6 D1 G1 3 mm S2 2 5 S1 G2 G2 3 4 D2 2.
85 mm D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Diode Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS Limit –8 "8 "2.
5 "2.
0 "7 –1.
05 1.
15 Unit V A W 0.
73 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead Notes a.
Surface Mounted on FR4 Board.
b.
t v 5 sec Document Number: 70973 S-61840—Rev.
A, 13-Sep-99 www.
vishay.
com S FaxBack 408-970-5600...

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SI3905DV Dual P-Channel 8-V (D-S) MOSFET - Vishay Siliconix

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