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SI3911DV

Part Number	SI3911DV
Manufacturer	Vishay Siliconix
Description	Dual P-Channel 20-V (D-S) MOSFET
Published	Apr 8, 2005
Detailed Description	Si3911DV New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.145 @ VGS...
Datasheet	SI3911DV PDF File

Overview

Si3911DV New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
145 @ VGS = –4.
5 V –20 0.
200 @ VGS = –2.
5 V 0.
300 @ VGS = –1.
8 V ID (A) –2.
2 –1.
8 –1.
5 S1 S2 TSOP-6 Top View G1 1 6 D1 G1 3 mm S2 2 5 S1 G2 G2 3 4 D2 2.
85 mm D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C Symbol VDS VGS 5 secs Steady State –20 "8 Unit V –2.
2 ID –1.
8 IDM IS –1.
05 1.
15 0.
73 –55 to 150 "8 –1.
8 –1.
5 A –0.
75 0.
83 0.
53 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71380 S-20275—Rev.
B, ...

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SI3911DV Dual P-Channel 20-V (D-S) MOSFET - Vishay Siliconix

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