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SI4392DY

Part Number	SI4392DY
Manufacturer	Vishay Siliconix
Description	N-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.00975 ...
Datasheet	SI4392DY PDF File

Overview

Si4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.
00975 at VGS = 10 V 0.
01375 at VGS = 4.
5 V ID (A) 12.
5 10.
0 SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4392DY-T1 Si4392DY-T1-E3 (Lead (Pb)-free) FEATURES • Extremely Low Qgd for Low Switching Losses • TrenchFET® Power MOSFET Available • 100 % Rg Tested RoHS* COMPLIANT APPLICATIONS • High-Side DC/DC Conversion - Notebook - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)a Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C L = 0.
1 mH TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limits 30 ± 20 12.
5 10 50 2.
7 30 45 3.
0 1.
9 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGSa Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a.
Surface mounted on 1" x 1" FR4 board, t 10 s.
Symbol RthJA RthJF Typical 33 16 Maximum 42 20 Unit °C/W * Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72151 S11-0209-Rev.
F, 14-Feb-11 www.
vishay.
com 1 Si4392DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 12.
5 A VGS = 4.
5 V, ID = 10.
0 A VDS = 15 V, ID = 12.
5 A IS = 2.
7 A, VGS = 0 V Total Gate Charge Qg Gate-Sou...

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SI4392DY N-Channel MOSFET - Vishay Siliconix

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