DatasheetsPDF.com

SI4416DY

NXP
Part Number SI4416DY
Manufacturer NXP
Description N-channel FET
Published Apr 8, 2005
Detailed Description Si4416DY N-channel enhancement mode field-effect transistor M3D315 Rev. 01 — 05 June 2001 Product data 1. Description ...
Datasheet PDF File SI4416DY PDF File

SI4416DY
SI4416DY

Overview
Si4416DY N-channel enhancement mode field-effect transistor M3D315 Rev.
01 — 05 June 2001 Product data 1.
Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: Si4416DY in SOT96-1 (SO8).
2.
Features s Low on-state resistance s Fast switching s TrenchMOS™ technology.
3.
Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications.
c c 4.
Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) 8 5 d Simplified outline Symbol gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) 1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors Si4416DY N-channel enhancement mode field-effect transistor 5.
Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tamb = 25 °C; pulsed; tp ≤ 10 s Tamb = 25 °C; pulsed; tp ≤ 10 s VGS = 10 V; ID = 9 A VGS = 4.
5 V; ID = 7.
3 A Typ − − − − 14 21 Max 30 9 2.
5 150 18 28 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) gate-source voltage (DC) drain current peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tamb = 25 °C; pulsed; tp ≤ 10 s Tamb = 25 °C; pulsed; tp ≤ 10 s; Figure 2 and 3 Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 2 Tamb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tamb = 25 °C; pulsed; tp ≤ 10 s; Tamb = 70 °C; pulsed; tp ≤ 10 s; Figure 1 Conditions Tj = 25 to 150 °C Min − − − − − − − −55 −55 − Max 30 ±20 9 7.
2 50 2.
5 1.
6 +150 +150 2.
1 Unit V V A A A W W °C °C A S...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)