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SI4500BDY

Vishay Siliconix
Part Number SI4500BDY
Manufacturer Vishay Siliconix
Description Complementary MOSFET
Published Apr 8, 2005
Detailed Description Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N...
Datasheet PDF File SI4500BDY PDF File

SI4500BDY
SI4500BDY

Overview
Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.
020 at VGS = 4.
5 V 0.
030 at VGS = 2.
5 V P-Channel - 20 0.
060 at VGS = - 4.
5 V 0.
100 at VGS = - 2.
5 V ID (A) 9.
1 7.
5 - 5.
3 - 4.
1 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S2 S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8D 7D 6D 5D G2 D G1 Ordering Information: Si4500BDY-T1-E3 (Lead (Pb)-free) Si4500BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel P-Channel Parameter Symbol 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C)a,b TA = 25 °C TA = 70 °C ID 9.
1 7.
3 6.
6 - 5.
3 - 3.
8 5.
3 - 4.
9 - 3.
1 Pulsed Drain Current IDM 30 - 20 Continuous Source Current (Diode Conduction)a,b IS 2.
1 1.
1 - 2.
1 - 1.
1 Maximum Power Dissipationa,b TA = 25 °C TA = 70 °C PD 2.
5 1.
6 1.
3 0.
8 2.
5 1.
6 1.
3 0.
8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
Surface Mounted on FR4 board.
b.
t ≤ 10 s.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJF N-Channel Typ.
Max.
40 50 75 95 20 22 P-Channel Typ.
Max.
41 50 75 95 23 26 Unit °C/W Document Number: 72281 S09-0705-Rev.
D, 27-Apr-09 www.
vishay.
com 1 Si4500BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltageb Dynamica IDSS ID(on) RDS(on) gfs...


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