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SI4804BDY

Vishay Siliconix
Part Number SI4804BDY
Manufacturer Vishay Siliconix
Description Dual N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Dual N-Channel 30 V (D-S) MOSFET Si4804BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.022 at VGS = 1...
Datasheet PDF File SI4804BDY PDF File

SI4804BDY
SI4804BDY

Overview
Dual N-Channel 30 V (D-S) MOSFET Si4804BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
022 at VGS = 10 V 0.
030 at VGS = 4.
5 V ID (A) 7.
5 6.
5 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Symmetrical Buck-Boost DC/DC Converter S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 D1 G1 D2 G2 Top View Ordering Information: Si4804BDY-T1-E3 (Lead (Pb)-free) Si4804BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 7.
5 5.
7 6.
0 4.
6 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.
7 0.
9 Single Pulse Avalanche Current Single Pulse Av...


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