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SI4807DY

Part Number	SI4807DY
Manufacturer	Vishay Siliconix
Description	P-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si4807DY Vishay Siliconix P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Gate 1 –30 30 Gate ...
Datasheet	SI4807DY PDF File

Overview

Si4807DY Vishay Siliconix P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Gate 1 –30 30 Gate 2 rDS(ON) (W) 0.
035 @ VGS = –10 V 0.
054 @ VGS = –4.
5 V 1.
3 @ VGS = –10 V 2.
2 @ VGS = –4.
5 V ID (A) "6 "4.
8 "0.
9 "0.
7 D SO-8 G2 G1 S S 1 2 3 4 Top View S P-Channel MOSFET 8 7 6 5 NC D D D G2 G1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID "4.
8 IDM IS PD TJ, Tstg "30 –1.
25 2.
3 W 1.
0 –55 to 150 _C "0.
7 "1.
5 A Symbol VDS VGS Gate 1 –30 "20 "6 Gate 2 Unit V "0.
9 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70643 S-00652—Rev.
E, 27-Mar-00 www.
vishay.
com S FaxBack 408-970-5600 Symbol RthJA ...

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SI4807DY P-Channel MOSFET - Vishay Siliconix

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