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SI4816DY

Part Number	SI4816DY
Manufacturer	Vishay Siliconix
Description	Dual N-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) C...
Datasheet	SI4816DY PDF File

Overview

Si4816DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Channel-1 Channel-2 30 0.
022 at VGS = 10 V 0.
030 at VGS = 4.
5 V 0.
013 at VGS = 10 V 0.
0185 at VGS = 4.
5 V ID (A) 6.
3 5.
4 10 8.
6 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.
50 V at 1.
0 A IF (A) 2.
0 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC D1 G1 A/S2 A/S2 G2 1 2 3 4 SO-8 8 D1 7 D2/S1 6 D2/S1 5 D2/S1 Top View Ordering Information: Si4816DY-T1-E3 (Lead (Pb)-free) Si4816DY-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 Schottky Diode A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Channel-1 Channel-2 Parameter Symbol 10 s Steady State 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 6.
3 5.
4 5.
3 10 7.
7 4.
2 8.
2 6.
2 Pulsed Drain Current IDM 30 40 Continuous Source Current (Diode Conduction)a IS 1.
3 0.
9 2.
2 1.
15 Avalanche Currentb Single Pulse Avalanche Energyb L = 0.
1 mH IAS EAS 12 7.
2 25 31.
25 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.
4 0.
9 1.
0 2.
4 1.
25 0.
64 1.
5 0.
8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a.
Surface Mounted on 1" x 1" FR4 board.
b.
Starting date code W46BAA.
t ≤ 10 s Steady State Steady State Symbol RthJA RthJC Channel-1 Typ.
Max.
72 90 100 125 51 63 Channel-2 Typ.
Max.
43 53 82 100 25 30 Schottky Typ.
Max.
48 60 80 100 28 35 Unit °C/W Document Number: 71121 S09-0868-Rev.
G, 18-May-09 www.
vishay.
com 1 Si4816DY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static G...

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