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Si4830ADY

Vishay Siliconix
Part Number Si4830ADY
Manufacturer Vishay Siliconix
Description Dual N-Channel MOSFET
Published Apr 8, 2005
Detailed Description Si4830ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ...
Datasheet PDF File Si4830ADY PDF File

Si4830ADY
Si4830ADY

Overview
Si4830ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
022 at VGS = 10 V 0.
030 at VGS = 4.
5 V ID (A) 7.
5 6.
5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage 30 0.
50 at 1 A IF (A) 2.
0 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • Si4830DY Pin Compatible • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Asymmetrical Buck-Boost DC/DC Converter D1 S1/D2 G1 S2 G2 1 2 3 4 SO-8 Top View 8 D1 7 D1 6 S1/D2 5 S1/D2 Ordering Information: Si4830ADY-T1-E3 (Lead (Pb)-free) Si4830ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 S1 N-Channel MOSFET D2 Schottky Diode G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID IDM 7.
5 5.
7 6.
0 4.
6 30 Continuous Source Current (Diode Conduction)a IS 1.
7 0.
9 Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C PD TJ, Tstg 2.
0 1.
1 1.
3 0.
7 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Steady State Notes: a.
Surface Mounted on 1" x 1" FR4 board.
Symbol RthJA RthJF MOSFET Typ.
Max.
52 62.
5 93 110 35 40 SCHOTTKY Typ.
Max.
53 62.
5 93 110 35 40 Unit V A W °C Unit °C/W Document Number: 72021 S09-0868-Rev.
G, 18-May-09 www.
vishay.
com 1 Si4830ADY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb Drain-Source ...


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