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SI4832DY

Part Number	SI4832DY
Manufacturer	Vishay Siliconix
Description	N-Channel MOSFET
Published	Apr 8, 2005
Detailed Description	Si4832DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W...
Datasheet	SI4832DY PDF File

Overview

Si4832DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.
018 @ VGS = 10 V 0.
028 @ VGS = 4.
5 V ID (A) 9 7.
3 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.
53 V @ 3.
0 A IF (A) 4.
0 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D Ordering Information: D D D N-Channel MOSFET S Si4832DY Si4832DY-T1 (with Tape and Reel) Schottky Diode G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C VDS VGS ID IDM IS IF...

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SI4832DY N-Channel MOSFET - Vishay Siliconix

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